The 18th International Conference on Crystal Growth and Epitaxy - ICCGE-18 : Nagoya, Japan, August 7th - 12th, 2016

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 General Session (Fundamentals & Growth Technologies)


Fundamentals of Nucleation and Crystal Growth

Theory, modeling, and experiments designed to learn the fundamental aspects of nucleation and crystal growth. Thermodynamics of interfaces.


Surfaces and Interfaces

Surface and interface science including the structure of solid-liquid interfaces, surface defects, and surfactants. Stress evolution during growth. Morphological stability.


Nanomaterials and Low Dimensional Structures

Synthesis of nanoparticles, quantum dots, nanowires, nanotubes, and other low dimensional structures. Materials for additive manufacturing.
Precise fabrication of nanometer-scale structures by lithography, self-assembly, chemical synthesis, etc. Applications in areas of energy conversion, storage, magnetics, optoelectronics, quantum computation, nanoelectromechanical systems, and semiconductor electronics.


Thin Films and Epitaxial Growth

Physical, chemical, and technological aspects of epitaxial growth.


Organic and Biological Crystallization

Current advancements in biomineralization, macromolecular crystallization, protein crystal growth, and bio-inspired materials synthesis. Biomimetics, learning from nature to grow organic and biomacromolecular crystals.


Bulk Crystal Growth

Bulk crystal growth including crystallization mechanisms and morphological instabilities. Development of new methods and approaches for bulk growth. Novel materials and structures.


Defect Formation

Studies of the mechanisms of defect formation in crystals. Investigations of crystal chemistry, crystalline structure, and physical properties.


Advanced Growth Technologies

Growth of advanced multidisciplinary inorganic materials. Investigations of crystal chemistry, crystalline structure, and physical properties.


In situ Observation and Characterization

Recent advancements in in-situ monitoring methods. Microscopy, spectroscopy, topography, scattering, and other characterization techniques.


External Fields, Microgravity

Nucleation and crystal growth under external fields, including reduced gravity, magnetic, and electric fields.


Industrial Crystallization

Innovations made over the last decade in the area of industrial crystallization. Equipment for industrial crystal growth. Crystal preparation such as cutting, polishing, and structuring. Food, cosmetics, and pharmaceutical crystallisation.

 Topical Session (Materials & Applications)


III-V Semiconductors

Bulk and epitaxial growth of III-V semiconductors.


Group IV Semiconductors

The latest progress in growth of group IV semicondutors such as Si, Ge, and SiGe.


2D Materials

Growth and application of graphene and other two dimensional materials.


II-VI and Oxide Materials

Growth of HgCdTe, ZnSe, ZnO, and CdTe, as well as other II-VI and oxide materials.


Materials for Spintronics

Growth of spintronic materials including diluted magnetic semiconductors, oxides, and metals.


Materials for Optical Devices

Crystal growth and characterization of materials for optical devices such as lasers, nonlinear optics, solar cells, and magnetooptic materials.


Materials for Electron Devices

Preparation and characterization of advanced materials for electron devices.


Materials for Organic Devices and Bio Applications

Functional materials and devices for organic electronics and bio applications. Thin film growth, self-assembly, and self organization.


Nitride Semiconductors

Recent progress and outlining future directions in the field of bulk substrates and thin film growth of III-Nitrides.


Silicon Carbide

Scientific and technological advances in the field of SiC and related materials such as diamond.

 Joint Session


Growth Simulation and Practice

Current status and future prospects of potential and limitation on simulation for prediction of crystal growth.

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