The 18th International Conference on Crystal Growth and Epitaxy - ICCGE-18 : Nagoya, Japan, August 7th - 12th, 2016

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 General Session (Fundamentals & Growth Technologies)

G01

Fundamentals of Nucleation and Crystal Growth

Theory, modeling, and experiments designed to learn the fundamental aspects of nucleation and crystal growth. Thermodynamics of interfaces.

G02

Surfaces and Interfaces

Surface and interface science including the structure of solid-liquid interfaces, surface defects, and surfactants. Stress evolution during growth. Morphological stability.

G03

Nanomaterials and Low Dimensional Structures

Synthesis of nanoparticles, quantum dots, nanowires, nanotubes, and other low dimensional structures. Materials for additive manufacturing.
Precise fabrication of nanometer-scale structures by lithography, self-assembly, chemical synthesis, etc. Applications in areas of energy conversion, storage, magnetics, optoelectronics, quantum computation, nanoelectromechanical systems, and semiconductor electronics.

G04

Thin Films and Epitaxial Growth

Physical, chemical, and technological aspects of epitaxial growth.

G05

Organic and Biological Crystallization

Current advancements in biomineralization, macromolecular crystallization, protein crystal growth, and bio-inspired materials synthesis. Biomimetics, learning from nature to grow organic and biomacromolecular crystals.

G06

Bulk Crystal Growth

Bulk crystal growth including crystallization mechanisms and morphological instabilities. Development of new methods and approaches for bulk growth. Novel materials and structures.

G07

Defect Formation

Studies of the mechanisms of defect formation in crystals. Investigations of crystal chemistry, crystalline structure, and physical properties.

G08

Advanced Growth Technologies

Growth of advanced multidisciplinary inorganic materials. Investigations of crystal chemistry, crystalline structure, and physical properties.

G09

In situ Observation and Characterization

Recent advancements in in-situ monitoring methods. Microscopy, spectroscopy, topography, scattering, and other characterization techniques.

G10

External Fields, Microgravity

Nucleation and crystal growth under external fields, including reduced gravity, magnetic, and electric fields.

G11

Industrial Crystallization

Innovations made over the last decade in the area of industrial crystallization. Equipment for industrial crystal growth. Crystal preparation such as cutting, polishing, and structuring. Food, cosmetics, and pharmaceutical crystallisation.

 Topical Session (Materials & Applications)

T01

III-V Semiconductors

Bulk and epitaxial growth of III-V semiconductors.

T02

Group IV Semiconductors

The latest progress in growth of group IV semicondutors such as Si, Ge, and SiGe.

T03

2D Materials

Growth and application of graphene and other two dimensional materials.

T04

II-VI and Oxide Materials

Growth of HgCdTe, ZnSe, ZnO, and CdTe, as well as other II-VI and oxide materials.

T05

Materials for Spintronics

Growth of spintronic materials including diluted magnetic semiconductors, oxides, and metals.

T06

Materials for Optical Devices

Crystal growth and characterization of materials for optical devices such as lasers, nonlinear optics, solar cells, and magnetooptic materials.

T07

Materials for Electron Devices

Preparation and characterization of advanced materials for electron devices.

T08

Materials for Organic Devices and Bio Applications

Functional materials and devices for organic electronics and bio applications. Thin film growth, self-assembly, and self organization.

T09

Nitride Semiconductors

Recent progress and outlining future directions in the field of bulk substrates and thin film growth of III-Nitrides.

T10

Silicon Carbide

Scientific and technological advances in the field of SiC and related materials such as diamond.

 Joint Session

J01

Growth Simulation and Practice

Current status and future prospects of potential and limitation on simulation for prediction of crystal growth.

If you would prefer yet another file format to submit your abstract,
please contact the Workshop Organizers in advance at

j_hasegawa109@west.jtb.jp

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